Mithun Kr. Bhowal

  • Qualification: M.Sc. (Elecctronics)
  • Designation: Guest Lecturer
  • Contact No: On demand
  • Email: bhowal.mithun@gmail.com
  • Area of Specialization: Characterization of semiconductor by apparatuses of photoluminescence, FTIR, Hall measurement, SEM-EDX.

Research Extension:

  • III-V compound narrow bandgap semiconductors and nanostructures.
  • Liquid Phase Epitaxial growth (LPE)

Teaching Experience:

                    Computer Science and electronics in under graduate level for honours and general courses.

Awards:

Professional Membership:

Important Publication:

JOURNAL        :

  1. “Investigation of the below gap infrared absorption properties of GaSbBi epitaxial layers grown on GaSb substrate”D. P. Samajdar, M. K. Bhowal, T. D. Das, and S. Dhar.Journal of Material Science (under press)
  2. "Photo luminescence studies of GaSbBi quantum dots grown on GaAs   by Liquid Phase Epitaxy"T.D. Das, D.P. Samjdar, M.K. Bhowal, S.C. Das, S. Das Physica B (Communicate)

CONFERENCE     : 

  1. “calculation of Refractive Index of Some Group III-V Semiconductor Materials at Energies below Bandgap” M. K. Bhowal, S. Das, S. Dhar.Presented at “6th International Conference Computers and Devices for Communication (CODEC-2015)” Institute of Radio Physics and Electronics, University of Calcutta, Kolkata.
  2. “Liquid Phase Epitaxial  Growth and Low Temperature photoluminescence of InPBi and GaSbBi” T. D. Das, D. P. Samjdar, M. K. Bhowal  and S. Dhar.Presented at “18th International Workshop on Physics of Semiconductor Devices (IWPSD-2015)”, Bangalore, India.
  3. “Low temperature photoluminescence of III-V bismide grown by Liquid Phase Epitaxy”T. D. Das, D. P. Samjdar, M. K. Bhowal  and S. Dhar. Presented at “ Internatonal Conference on Condensed Matter Physics-2014” , Himachal Pradesh, India.

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